Semi Materials Co., Ltd.

Graphite for crystal pulling III/V compounds

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Semi Materials Co., Ltd.
[Korea]

Address
Lojit venture bldg 4F, 22-2 Sunae-Dong, Bundang-Gu,  Sungnam-City Gyeonggi-do
Phone
82-31-7118978
Contact name
Mike. Jung

Description

R6300P is used also for crystal pulling III/V compounds. When pulling a semi-insulating GaAs materials it is essential to use purified graphite parts (Grade recommendation R6300PT)

Graphite for III/V synthesis

Synthesizing tubes made of graphite are used as reaction vessels or for heating reaction vessels in the production of III/V semiconductors.

Requirements

  • a homogeneous fine-grained structure
  • high density
  • suitable electrical resistance
  • highest purity

Grade recommendation R6300P, R6340P

Graphite for melting high purity metal and semiconductor materials

Graphite crucibles and boats of various designs have many uses as containers for high purity metals or semiconductor materials.

The most suitable materials is selected on the basis of the following criteria

  • method of heatign
  • temperature
  • protective to be melted
  • purity

Grade recommendation

R6300N, R6340N, R6650N, HLMN(depending on problems encountered) Finished parts made from these grades are also recommended in superpure form or with one of the different coatings available.

Physical properties of purity graphite (averages)

Physical Property
R6300*
Density (g/cm3)
1.75
Porosity(open) (%)
14
Hardness Rockwell B (HR)
751
10/100
E-Modulus(N/mm2)
9000
Flexural Strength (N/mm2)
31
Compressive Strength (N/mm2)
80
Specific Electrical Resistance(mWm)
18
Thermal Expansion
(20~1000°C ; x10-6K-1)
3.8
Thermal Conductivity (W/mK)
65
Pressing Method
Isostatic Molded

WG : with grain.
AG : against grain.
If not stated otherwise, all values are measured with a test piece the axis of which is cut with grain.

Typical analysis

Element Concentration
-
code
Ash
Value
Al
B
Ca
Co
Cr
Cu
Fe
K
High purity
P
20ppm
<0.1
1
1
<0.1
<0.1
0.2
0.5
<1
Super
pure
S
5ppm
<0.1
0.05
0.3
<0.1
<0.1
0.1
0.3
<1
-
Mg
Mn
Na
Ni
P
S
Si
Ti
V
-
High purity
0.15
<0.1
<1
<0.1
<0.3
<2
<2
0.5
0.2
Super
pure
0.05
<0.1
<1
<0.1
<0.3
<2
0.5
0.3
0.1


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