Semi Materials Co., Ltd.

Graphite susceptors for metal organic gas phase epitaxy(MOCVD)

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Semi Materials Co., Ltd.
[Korea]

Address
Lojit venture bldg 4F, 22-2 Sunae-Dong, Bundang-Gu,  Sungnam-City Gyeonggi-do
Phone
82-31-7118978
Contact name
Mike. Jung

Description

Graphite susceptors for metal organic gas phase epitaxy(MOCVD)

In the III/V gas phase epitaxy process semiconductor layers are deposited on GaAs or InP substrates through the reaction of gaseous metal organic components.

SiC-coated graphite susceptors have been used successfully as substrate trays.

Here again the R6400, developed specially for SiC coating, can be used (see also "Si-epitaxy susceptors of graphite")

Grade recommendation
R6400X5, R6300X4


Physical properties of purity graphite (averages)
Physical Property
R6300
R6400
Density (g/cm3)
1.75
1.78
Porosity(open) (%)
14
14
Hardness Rockwell B (HR)
751
10/100
100
10/100
E-Modulus(N/mm2)
9000
13000
Flexural Strength (N/mm2)
31
45
Compressive Strength (N/mm2)
80
105
Specific Electrical Resistance(mWm)
18
12
Thermal Expansion
(20~1000°C ; x10-6K-1)
3.8
5.3
Thermal Conductivity (W/mK)
65
105
Pressing Method
Isostatic Molded
WG : with grain.
AG : against grain.
If not stated otherwise, all values are measured with a test piece the axis of which is cut with grain.

Typical analysis
Element Concentration
-
code
Ash
Value
Al
B
Ca
Co
Cr
Cu
Fe
K
Mg
Mn
Na
Ni
P
S
Si
Ti
V
High purity
P
20ppm
<0.1
1
1
<0.1
<0.1
0.2
0.5
<1
0.15
<0.1
<1
<0.1
<0.3
<2
<2
0.5
0.2
Super
pure
S
5ppm
<0.1
0.05
0.3
<0.1
<0.1
0.1
0.3
<1
0.05
<0.1
<1
<0.1
<0.3
<2
0.5
0.3
0.1


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